Plasma processing device and method

等离子体处理装置及方法

Abstract

在基材载置台(1)的基材载置面(1a)上载置有基材(2)。感应耦合型等离子体喷枪单元(3)包括:筒状腔室(7),其包括设有长方形的狭缝状的等离子体喷出口(4)且由绝缘体材料构成的圆筒(5)、及闭塞圆筒(5)的两端的盖(6);气体喷出口(8),其向筒状腔室(7)内供给气体;螺线管(9),其使筒状腔室(7)内产生高频电磁场。通过从高频电源(41)向螺线管(9)供给高频电力,由此使筒状腔室(7)内产生等离子体(P)并将其从等离子体喷出口(4)向基材(2)照射。能够使等离子体喷枪单元(3)和基材载置台(1)相对地移动并同时对基材表面进行热处理。
A substrate (2) is mounted on a substrate mounting surface (1a) of a substrate mounting base (1). An inductive coupling type plasma torch unit (3) is provided with a rectangular slit-shaped plasma nozzle (4), and is composed of: a cylindrical chamber (7) consisting of a cylinder (5) comprising an insulation material, and lids (6) that cover both ends of the cylinder (5); a gas nozzle (8) that supplies gas to the inside of the cylindrical chamber (7); and a solenoid coil (9) that produces a high-frequency electromagnetic field inside of the cylindrical chamber (7). By supplying high-frequency power to the solenoid coil (9) from a high-frequency power source (41), plasma (P) is generated inside of the cylindrical chamber (7) and is applied to the substrate (2) from the plasma nozzle (4). The substrate surface can be heat treated while the plasma torch unit (3) and the substrate mounting base (1) move relative to each other.

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    CN-105448636-BNovember 10, 2017松下知识产权经营株式会社等离子体处理装置、等离子体处理方法和制造电子器件的方法
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