Integrated system with double-gate enhancement-mode HEMT (high electron mobility transistor) device

含双栅增强型hemt器件的集成系统

Abstract

一种含双栅增强型HEMT器件的集成系统,包括基座以及安装在基座上的双栅四端III族氮化物增强型HEMT器件,该器件包括异质结构以及通过异质结构中的二维电子气形成电连接的源、漏极,该异质结构包括:设置于源、漏极之间的第一半导体,形成于第一半导体表面的第二半导体,设于第二半导体表面的主栅,形成于第二半导体和主栅表面的介质层,设于介质层表面的顶栅;以及,用于使主、顶栅实现同步信号控制的分压补偿电路等,前述电路包括串联和/或并联设置在分别与源极和主、顶栅电连接的各基座接出端之间的分立电容和/或分立电阻。本发明可以对增强型HEMT器件中的“电流崩塌效应”进行有效控制,并可以将双栅电极四端器件等同于三端器件应用于集成系统中。
The invention relates to an integrated system with a double-gate enhancement-mode HEMT (high electron mobility transistor) device. The integrated system comprises a base and a double-gate four-terminal III-nitride enhancement-mode HEMT device which is installed on the base. The device comprises a heterostructure, and a source and a drain which are electrically connected through two-dimensional electrons in the heterostructure. The heterostructure comprises a first semiconductor which is arranged between the source and the drain, a second semiconductor which is arranged on the surface of the first semiconductor, a main gate which is arranged on the surface of the second semiconductor, a dielectric layer which is formed on the surfaces of the second semiconductor and the main gate, a top gate which is arranged on the surface of the dielectric layer, a voltage division and compensation circuit which is used for enabling the main gate and the top gate to realize synchronous signal control, and the like, wherein the voltage division and compensation circuit comprises a discrete capacitor and/or discrete resistor which are arranged in series and/or in parallel between base leading-out ends which are respectively and electrically connected with the source, the main gate and the top gate. The integrated system with the double-gate enhancement-mode HEMT device has the advantages that the current collapse effect in the enhancement-mode HEMT device can be effectively controlled and the double-gate four-terminal device can be equivalently used as a three-terminal device in the integrated system.

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Patent Citations (3)

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    Title
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