contacts (Total 22389 Patents Found)

An electric switching unit for preventing oxidation of copper-base contacts in contactors comprises a body (2), comprises an electromagnet (11) having a stationary yoke (7) and a moving armature (15) in cooperating relation with a plurality of switches (36). A protective casing (42) is fixed on the body so as to contai...
A temporary package for testing semiconductor dice, a method for forming the temporary package and a method for testing dice using the temporary package are provided. The temporary package includes hard-metal ball contacts arranged in a dense grid pattern, such as a ball grid array. The dense grid pattern allows the te...
A gate electrode is made up of a lower electrode of polysilicon and an upper electrode including a low-resistance film. A nitride sidewall is formed to cover at least the side faces of an insulator cap and the upper electrode. A pad oxide film is formed to cover at least part of the side faces of the lower electrode an...
A method for forming within a dielectric layer upon a substrate within a microelectronics fabrication a series of contact via holes etched through the dielectric layer to multi-level contact layers employing reactive plasma etching methods to form the series of contact via holes. The first plasma etch method employs fl...
There is disclosed a method for manufacturing and mounting electric contacts for control members of small dimensions, particularly for control members used in the horological field. This method includes the following steps: a) stamping and pre-shaping a plate of electrically conductive material for forming an intermedi...
Formation of metal pipes resulting from formation of metal silicide contacts are reduced or avoided. To reduce formation of metal pipes, an epitaxial layer is formed over the diffusion region on which the metal silicide contact is formed. The epitaxial layer reduces defects which enhances diffusion of metal atoms or mo...
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a tapered contact opening in an ILD disposed on a substrate, wherein a source/drain contact area is exposed, preamorphizing a portion of a source drain region of the substrate, implanting boron into th...
A method of forming overlapping contacts in a semiconductor device includes forming a first contact in a dielectric layer; etching the dielectric layer to form a recess adjacent to the first contact and removing a top portion of the first contact while etching the dielectric layer, wherein a bottom portion of the first...
The present invention proposes a back-contact back-sheet for photovoltaic modules comprising back-contact cells and a method of manufacturing thereof. The back-contact back-sheet comprises an insulating substrate upon which a connecting circuit is attached. The back-contact back-sheet further comprises at least a regio...
Various apparatuses, including three-dimensional (3D) memory devices and systems including the same, are described herein. In one embodiment, a 3D memory device can include at least two sources; at least two memory arrays respectively formed over and coupled to the at least two sources; and a source conductor electrica...
Connector inserts having a high signal integrity and low insertion loss by shielding signal contacts. One example may provide one or more ground contacts between a front opening and signal pins of a connector insert. These ground contacts may have sufficient lever arm to provide a good contact to a corresponding contac...
Devices and methods for assembling co-planar electrical contacts in a connector are provided herein. In one aspect, an exemplary method of assembly comprises depositing solder in a connector plug enclosure, positioning electrical contacts on the solder deposits, advancing the hotbar toward the enclosure contacting each...
A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feat...
A method of manufacturing strips of metallic parts, comprises: providing a metal sheet (20), having a flat surface, stamping in the metal sheet : a first and a second bands (7a, 7b) continuous along the first direction (X), a first series of part patterns (8), a second series of part patterns (8), arranged head to tail...
A computer-implemented method is described for instant messaging comprising: categorizing two or more instant messaging contact names into a single meta contact; receiving a request to transmit an instant message directed to the meta contact; selecting one of the two or more instant messaging contact names within the m...
La présente invention concerne des procédés de formation de dispositifs à semi-conducteurs présentant des contacts personnalisés, consistant à fournir une première couche isolante et à réaliser des motifs sur la première couche isolante de telle sorte que la première couche isolante définisse au moins une ...
Un détecteur infrarouge photoconducteur à impédance adaptée, à hétérojonctions isotypiques, comporte des contacts de blocage (66, 68), placés sur sa partie inférieure, qui préviennent le transfert de porteurs minoritaires depuis la région active (42a) du détecteur et allongent ainsi la durée de vie de ces ...
La présente invention concerne un contact électrique d'économie de matériaux conducteurs pour des fiches et des prises électriques pour les secteurs industriel et/ou tertiaire, caractérisé en ce qu'il comprend au moins un support central (30, 30') réalisé à partir d'un matériau robuste, et un...
A female connector (30) comprises an elongated housing (32) and two separate blades (34, 36). The housing (32) includes one power region (40) and one signal region (50) spaced from each other by a space (90) therebetween. The power region (40) includes a plurality of first passageways (42) for receiving a corresponding...
A process for selectively depositing a contacting material (20) in trenches (18) for a via or contact which selectively eliminates potential metal contaminants (22) by removing a sacrificial layer (16) after the material (20) is selectively deposited. Initially, the trenches (18) are formed by selectively exposing the ...
A method for determining the positions of contacts through a global positioning system (GPS) is disclosed. The method includes sending position requests to the contacts, feeding back the current position information of the contacts to a GPS receiver of a user after receiving position requests, searching the contacts lo...
A thin-silicon-on-insulator transistor with borderless self-aligned contacts includes a buried oxide layer above a substrate. A silicon layer overlays the buried oxide layer. A gate stack is on the silicon layer. The gate stack includes a gate oxide layer on the silicon layer and a gate electrode on the gate oxide laye...
A multi-pole toggle switch achieves sub-miniature dimensions by mounting the four see-saw contacts, four stationary contacts and four actuating pads in two parallel, linear rows, each row on an opposite side of the path of the tip of the toggle lever plunger within the switch housing. A single actuator block carries th...
An electrical connector assembly includes a plug connector and a receptacle connector adapted to mate each other. The receptacle connector includes an insulative housing enclosed within a shell. The housing includes a main body with a tongue extending forwardly therefrom. A plurality of signal contacts received within ...
Systems and methods for configuring contacts of a first connector includes detecting mating of a second connector with the first connector and in response to the detection, sending a command over one of the contacts and waiting for a response to the command. If a valid response to the command is received, the system de...
A sacrificial substrate for fabricating semiconductor device assemblies and packages with edge contacts includes conductive elements on a surface thereof, which are located so as to align along a street between each adjacent pair of semiconductor devices on the device substrate. A semiconductor device assembly or packa...
According to one embodiment of the invention, the gate contact is formed by a selective deposition on the gate electrode. One acceptable technique for the selective deposition is by plating. Plating is one process by which a metal structure, such as a gate contact, may be formed directly on the gate electrode. The plat...
An interconnection apparatus and a method of forming an interconnection apparatus. Contact structures are attached to or formed on a first substrate. The first substrate is attached to a second substrate, which is larger than the first substrate. Multiple such first substrates may be attached to the second substrate in...
A switching system includes switchgear that can be contacted via pin contacts. In at least one embodiment, the switching system is provided with pin contacts and mating pin contacts and at least one device(s) for the transmission of force onto the switchgear, thereby allowing to establish and interrupt contact to the s...